Introducing the NSR-S333F ArF Scanner – Now Open for Orders Starting in October | News

TOKYO – Nikon Corporation announces the launch of its latest ArF scanner, the NSR-S333F, which delivers industry-leading overlay accuracy*1 alongside exceptional productivity. Built on the advanced platform of the flagship ArF immersion scanner NSR-S636E and improving upon the proven ArF optics of the NSR-S322F, the NSR-S333F simultaneously achieves both high throughput with overlay precision. Designed to support fine patterning across a wide range of devices including logic, memory, and image sensors, Nikon will start accepting orders for the NSR-S333F beginning in October 2025, with initial deliveries expected to start in the second half of 2026.

  • *1Among ArF scanners announced as of September 25, 2025. According to Nikon research.

Development Background

As the rise of IoT and AI accelerates, the demand for ever smaller, higher-performance semiconductor devices increases. From advanced logic chips to next-generation memory and high-resolution image sensors, manufacturers are under increasing pressure to achieve tighter overlay accuracy and higher productivity. To meet these demands, Nikon developed the NSR-S333F to deliver both exceptional productivity with precision accuracy.

Key Benefits

1. Significant Improvement in Throughput by Platform Enhancement

The NSR-S333F builds on the advanced platform of Nikon’s flagship ArF immersion scanner, the NSR-S636E. By increasing the speed of both the wafer stage and reticle stage, the system achieves a throughput of over 300 wafers per hour*2. Operational stability has also been additionally optimized, resulting in approximately 1.5x higher productivity compared to the previous model, the NSR-S322F*3.

  • *2For 300 mm wafers, 96 shots.
  • *3May vary depending on operating conditions, etc.

2. Achieves Industry-Leading Overlay Accuracy

By enhancing the proven optical system of previous ArF scanners and combining with the advanced platform of the ArF-S636E, the NSR-S333F features improved performance in key areas such as wafer alignment measurement, reticle stage measurement, and autofocus, and delivers industry-leading overlay accuracy (MMO*4 ≤ 4nm), setting a new standard for ArF scanners.

  • *4Mix and Match Overlay. Overlay accuracy between the same model (e.g., NSR-S333F#1 to NSR-S333F#2).

Performance Overview

Swipe horizontally to view full table.

Resolution ≦ 65 nm
NA (numerical aperture) 0.92
Light Source ArF excimer laser (193 nm wavelength)
Reduction Ratio 1 : 4
Maximum Exposure area 26 mm x 33 mm
Overlay Accuracy MMO: ≦ 4 nm
Throughput ≧ 300 wafers / hour (96 shots)

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